Thursday, 23 June 2011

Micron and Sun co-develop Flash Memory

Micron Technology has announced it has worked with Sun Microsystems to develop a new single-level cell (SLC) enterprise NAND technology that extends the lifespan of flash-based storage for enterprise applications. The result of the collaboration has yielded production devices capable of achieving one million write cycles.

Micron claims that its SLC NAND flash devices will sustain one million write cycles, ten times more compared to typical SLC NAND flash’s one hundred thousand write cycles. The number of write cycles for MLC NAND is unclear, but it may also go up ten times from 10 thousand times per bit.

Micron is now sampling its Enterprise NAND in densities up to 32Gb/s. Volume production is expected in the first quarter of 2009. Micron also plans to introduce both SLC and multi-level cell (MLC) enterprise versions on its industry-leading 34nm NAND process early next year.

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