ADVANCED FLASH MEMORY CHIP IN THE WORLD
Combination of X3 and 32 nanometer Represents Breakthroughs in Size
and Density; Significantly Reduces Manufacturing Cost While
Maintaining Performance
Will allow for higher capacity of microSD cards not possible with
existing technologies
Maintains performance levels of 43nm process technology due to
SanDisk's advanced All Bit-Line architecture and 32nm process
technology advancements
SanDisk Corporation and Toshiba Corporation today announced the
co-development of multi-level cell NAND flash memory using 32-nm
process technology to produce a 32-Gb X3 memory chip. The breakthrough
introduction is expected to quickly bring to market advanced
technologies that will enable greater capacities and reduce
manufacturing costs for products ranging from memory cards to Solid
State Drives.
"The development of our third-generation 3-bits-per-cell technology on
32nm within one and a half years after the introduction of the first
generation of 3-bits-per-cell on 56nm shows the incredibly fast pace
necessary to be a world-class producer in today's industry," said
Sanjay Mehrotra, co-founder and president, SanDisk. "This allows us to
offer higher capacities at compelling form factors while reducing
manufacturing costs – all helping to expand our various product lines.
This new development highlights SanDisk's deep level of technical
expertise and innovation that ultimately benefits consumers."
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